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The negatively charged tin-vacancy center in diamond ( ${\mathrm{SnV}}^{-}$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the ${\mathrm{SnV}}^{-}$’s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 K. Here, we demonstrate measurement of a single ${\mathrm{SnV}}^{-}$electronic spin with a single-shot readout fidelity of 87.4%, which can be further improved to 98.5% by conditioning on multiple readouts. In the process, we develop understanding of the relationship between strain, magnetic field, spin readout, and microwave spin control. We show that high-fidelity readout is compatible with rapid microwave spin control, demonstrating a favorable parameter regime for use of the ${\mathrm{SnV}}^{-}$center as a high-quality spin-photon interface. Finally, we use weak quantum measurement to study measurement-induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and provides a universal method to characterize the efficiency of color-center spin readout. Taken together, these results overcome an important hurdle in the development of the ${\mathrm{SnV}}^{-}$-based quantum technologies and, in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters. Published by the American Physical Society2024 

AbstractQuantum information processing and quantum sensing is a central topic for researchers who are part of the Materials Research Society and the Quantum Staging Group is providing leadership and guidance in this context. We convened a workshop before the 2022 MRS Spring Meeting and covered four topics to explore challenges that need to be addressed to further promote and accelerate the development of materials with applications in quantum technologies. This article captures the discussions at this workshop and refers to the pertinent literature. Graphical abstract 

Interfacing solid-state defect electron spins to other quantum systems is an ongoing challenge. The ground-state spin’s weak coupling to its environment not only bestows excellent coherence properties but also limits desired drive fields. The excited-state orbitals of these electrons, however, can exhibit stronger coupling to phononic and electric fields. Here, we demonstrate electrically driven coherent quantum interference in the optical transition of single, basally oriented divacancies in commercially available 4H silicon carbide. By applying microwave frequency electric fields, we coherently drive the divacancy’s excited-state orbitals and induce Landau-Zener-Stückelberg interference fringes in the resonant optical absorption spectrum. In addition, we find remarkably coherent optical and spin subsystems enabled by the basal divacancy’s symmetry. These properties establish divacancies as strong candidates for quantum communication and hybrid system applications, where simultaneous control over optical and spin degrees of freedom is paramount. 

Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.